Explore the fundamental physics and engineering principles behind semiconductor device fabrication in this graduate-level course covering front-end processing techniques for silicon integrated circuits. Master advanced physical models and practical aspects of critical manufacturing processes including oxidation, diffusion, ion implantation, and epitaxy through comprehensive lectures that bridge theoretical understanding with real-world applications. Delve into crystal growth and wafer fabrication, examining the basic properties of silicon wafers and essential cleaning and gettering procedures for contamination control. Study oxidation processes and the silicon/silicon dioxide interface using Deal/Grove models and thin oxide theories, while analyzing two-dimensional effects, doping influences, and point defect behavior. Investigate dopant diffusion mechanisms through Fick's laws, numerical techniques, Fermi level effects, and atomic-scale models, complemented by profile measurement methodologies. Examine ion implantation and annealing processes using both analytic models and Monte Carlo simulations, focusing on energy loss physics, damage mechanisms, and transient enhanced diffusion phenomena. Learn to utilize the SUPREM IV process simulator for modeling complex fabrication sequences and understand thin film deposition techniques including chemical vapor deposition and physical vapor deposition methods. Analyze epitaxial growth processes, topography modeling, and various etching techniques including plasma etching and reactive ion etching for pattern transfer. Conclude with advanced topics covering silicides, device contacts, novel gate materials, and the growth and processing of strained silicon/silicon-germanium structures, including stress effects on device performance and high-performance MOS and bipolar device architectures.

Syllabus

3. Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)
4. Wafer Cleaning and Gettering (cont.)
5. Wafer Cleaning and Gettering - Contamination Measurement Techniques
6. Oxidation and the Si/SiO2 Interface. Deal/Grove Model, Thin Oxide Models
7. Oxidation and the Si/SiO2 Interface. 2D Effects, Doping Effects, Point Defect
8. Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic
9. Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects
10. Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion
11. Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques
12. Ion Implantation and Annealing - Analytic Models and Monte Carlo
13. Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED
14. Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction
15. Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail
16. The SUPREM IV Process Simulator
17. Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth
18. Thin Film Deposition and Epitaxy - CVD Examples and PVD
19. Thin Film Deposition and Epitaxy - Modeling Topography of Deposition
20. Etching - Introduction
21. Etching - Poly Gate Etching, Stringers, Modeling of Etching
22. Silicides, Device Contacts, Novel Gate Materials
23. Growth and Processing of Strained Si/SiGe and Stress Effects on Devices