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3. Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)
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Classroom Contents
Physics of Microfabrication - Front End Processing
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- 1 3. Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)
- 2 4. Wafer Cleaning and Gettering (cont.)
- 3 5. Wafer Cleaning and Gettering - Contamination Measurement Techniques
- 4 6. Oxidation and the Si/SiO2 Interface. Deal/Grove Model, Thin Oxide Models
- 5 7. Oxidation and the Si/SiO2 Interface. 2D Effects, Doping Effects, Point Defect
- 6 8. Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic
- 7 9. Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects
- 8 10. Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion
- 9 11. Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques
- 10 12. Ion Implantation and Annealing - Analytic Models and Monte Carlo
- 11 13. Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED
- 12 14. Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction
- 13 15. Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail
- 14 16. The SUPREM IV Process Simulator
- 15 17. Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth
- 16 18. Thin Film Deposition and Epitaxy - CVD Examples and PVD
- 17 19. Thin Film Deposition and Epitaxy - Modeling Topography of Deposition
- 18 20. Etching - Introduction
- 19 21. Etching - Poly Gate Etching, Stringers, Modeling of Etching
- 20 22. Silicides, Device Contacts, Novel Gate Materials
- 21 23. Growth and Processing of Strained Si/SiGe and Stress Effects on Devices
