Quantum Geometry and the Electric Magnetochiral Anisotropy in Tellurene Field Effect Transistors

Explore quantum geometry and electric magnetochiral anisotropy in tellurene field effect transistors through this 34-minute conference talk delivered by Marcello Barbosa Neto from UFRJ at the Workshop on Frontiers in Quantum Materials. Delve into the quantum geometric properties of tellurene, a two-dimensional material with unique electronic characteristics, and understand how these properties manifest in field effect transistor configurations. Learn about the electric magnetochiral anisotropy phenomenon, which describes the directional dependence of electrical transport properties under magnetic fields in chiral systems. Examine the theoretical framework connecting quantum geometry to observable transport phenomena in tellurene-based devices. Discover how the intrinsic geometric properties of electronic wavefunctions influence the electrical behavior of these novel two-dimensional materials. Gain insights into the potential applications of tellurene field effect transistors in quantum electronics and spintronics, where the interplay between quantum geometry and transport properties opens new possibilities for device functionality.