ECE 606 Solid State Devices - F2020

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Explore the fundamental principles of solid state devices through this comprehensive university-level course covering semiconductor physics, quantum mechanics, and electronic device operation. Master the theoretical foundations starting with semiconductor materials, crystal structures, and quantum mechanical principles including Schrödinger's equation and electron tunneling phenomena. Delve into bandstructure theory, Brillouin zones, and reciprocal lattices while learning to calculate density of states and effective mass tensors. Study carrier statistics using Fermi-Dirac distributions, doping mechanisms with donors and acceptors, and non-equilibrium processes including recombination and generation mechanisms. Analyze transport phenomena through drift and diffusion currents, mobility concepts, and the Hall effect, then apply semiconductor equations for both analytical and numerical solutions. Examine PN junction physics including depletion regions, band diagrams, I-V characteristics, and AC response properties. Investigate Schottky diodes and their physical processes, followed by comprehensive coverage of bipolar junction transistors including the Ebers-Moll model, current gain optimization, and high-frequency response. Study advanced heterojunction bipolar transistors with various junction types and modern design approaches. Conclude with MOS device physics covering electrostatics, capacitor behavior, MOSFET operation from sub-threshold to inversion regimes, velocity saturation effects, and modern challenges including short channel effects and mobility enhancement techniques.

Syllabus

ECE 606 Solid State Devices L1.1: Solid State Devices
ECE 606 Solid State Devices L1.2: Basic Device Operations – Raising 1,000 Questions
ECE 606 Solid State Devices L1.3: Course Content and Requirements
ECE 606 Solid State Devices L2.1: Materials - Typical Semiconducting Materials
ECE 606 Solid State Devices L2.2: Materials - Typical Applications Elemental/Compound Semiconductors
ECE 606 Solid State Devices L2.3: Materials - Atomic Positions and Bond Orientations
ECE 606 Solid State Devices L3.1: Crystals - Crystal Definitions
ECE 606 Solid State Devices L3.2: Crystals - Tables of Bravais Lattice
ECE 606 Solid State Devices L3.3: Crystals - Density of Definitions/Applications to Common Material
ECE 606 Solid State Devices L3.4: Crystals - Surfaces, Miller Index
ECE 606 Solid State Devices L4.1: Quantum Mechanics - Classic Systems
ECE 606 Solid State Devices L4.2: Quantum Mechanics - The Advent of Quantum Mechanics
ECE 606 Solid State Devices L4.3: Quantum Mechanics - Why Do We Need Quantum Mechanics?
ECE 606 Solid State Devices L4.4: Quantum Mechanics - Formulation of Schrödinger's Equation
ECE 606 Solid State Devices L5.1: Analytical Solutions - Free and Tightly Bound Electrons
ECE 606 Solid State Devices L5.2: Analytical Solutions - Electrons in a Finite Potential Well
ECE 606 Solid State Devices L6.1: Electron Tunneling - Transfer Matrix Method
ECE 606 Solid State Devices L6.2: Electron Tunneling - Tunneling Through a Single Barrier
ECE 606 Solid State Devices L6.3: Electron Tunneling - Tunneling Through a Double Barrier Structure
ECE 606 Solid State Devices L6.4: Electron Tunneling - Tunneling Through N Barriers - Bandstructure
ECE 606 Solid State Devices L6.5: Electron Tunneling - Analytical and Numerical Solution Strategies
ECE 606 Solid State Devices L7.1: Bandstructure - Problem Formulation
ECE 606 Solid State Devices L7.2: Bandstructure - Solutions
ECE 606 Solid State Devices L7.3: Bandstructure - Band Properties
ECE 606 Solid State Devices L8.1: Brillouin Zone and Reciprocal Lattice - 1D Problems
ECE 606 Solid State Devices L8.2: Brillouin Zone and Reciprocal Lattice - 2D Problems
ECE 606 Solid State Devices L8.3: Brillouin Zone and Reciprocal Lattice - 3D Problems
ECE 606 Solid State Devices L9.1: Constant Energy Surfaces
ECE 606 Solid State Devices L9.2: Density of States
ECE 606 Solid State Devices L10.1: Bandstructure - E(k) Diagrams in Specific Crystal Directions
ECE 606 Solid State Devices L10.2: Bandstructure - Constant Energy Surfaces - Effective Mass Tensor
ECE 606 Solid State Devices L10.3: Bandstructure - Density of States Effective Mass
ECE 606 Solid State Devices L11.1: Bandstructure Measurements
ECE 606 Solid State Devices L11.2: Effective Mass Measurements
ECE 606 Solid State Devices L12.1: Occupation of States - Rules of Filling Electronic States
ECE 606 Solid State Devices L12.2: Occupation of States - Derivation of Fermi-Dirac Statistics
ECE 606 Solid State Devices L12.3: Occupation of States - Intrinsic Carrier Concentration
ECE 606 Solid State Devices L13: Band Diagrams
ECE 606 Solid State Devices L14.1: Doping - Basic Concepts of Donors and Acceptors
ECE 606 Solid State Devices L14.2: Doping - Statistics of Donor and Acceptor Levels
ECE 606 Solid State Devices L14.3: Temperature Dependence of Carrier Concentration
ECE 606 Solid State Devices L14.4: Multiple Doping, Co-Doping, And Heavy-Doping
ECE 606 Solid State Devices L15.1: Non-Equilibrium - Steady State, Transient, Equilibrium
ECE 606 Solid State Devices L15.2: Non-Equilibrium - Recombination & Generation Overview
ECE 606 Solid State Devices L16.1: Recombination & Generation - Motivation of R-G Formula
ECE 606 Solid State Devices L16.2.1: SRH Formula - Trap Assisted Recombination Rates
ECE 606 Solid State Devices L16.2.2: SRH Formula - Capture and Emission Relationship (n1 and p1)
ECE 606 Solid State Devices L16.2.3: SRH Formula - Steady State Trap Population
ECE 606 Solid State Devices L16.2.4: SRH Formula - Recombination-Generation Rate
ECE 606 Solid State Devices L16.3: Applications of SRH Formula for Special Cases
ECE 606 Solid State Devices L16.4: Recombination & Generation - Direct and Auger Recombination
ECE 606 Solid State Devices L16.5: Recombination & Generation - Nature of Interface States
ECE 606 Solid State Devices L16.6: SRH Formula Adapted to Interface States
ECE 606 Solid State Devices L16.7: Surface Recombination in Depletion Region
ECE 606 Solid State Devices L17.1: Transport - Drift Current
ECE 606 Solid State Devices L17.2: Transport - Mobility
ECE 606 Solid State Devices L17.3: Transport - Carrier Concentration from Hall Effect
ECE 606 Solid State Devices L17.4: Transport - Physics of Diffusion - Einstein Relationship
ECE 606 Solid State Devices L18.1: Semiconductor Equations - Continuity Equations
ECE 606 Solid State Devices L18.2: Semiconductor Equations - Analytical Solutions
ECE 606 Solid State Devices L18.3: Semiconductor Equations - Numerical Solutions
ECE 606 Solid State Devices L19.1: PN Junctions - Structure and Depletion Region
ECE 606 Solid State Devices L19.2: PN Junctions - Drawing Band-Diagrams in Equilibrium
ECE 606 Solid State Devices L20.1: PN Diode I-V Characteristics - Band Diagram with Applied Bias
ECE 606 Solid State Devices L20.2: PN Diode I-V Characteristics - Derivation of Forward Bias Formula
ECE 606 Solid State Devices L20.3: PN Diode I-V Characteristics - Forward Bias - Non-Linear Regime
ECE 606 Solid State Devices L20.4: PN Diode I-V Characteristics - Non-Ideal Effects
ECE 606 Solid State Devices L21.1: PN Diode AC Response - Conductance and Series Resistance
ECE 606 Solid State Devices L21.2: PN Diode AC Response - Majority Carrier Junction Capacitance
ECE 606 Solid State Devices L21.3: PN Diode AC Response - Minority Carrier Diffusion Capacitance
ECE 606 Solid State Devices L22.1: PN Diode Large Signal Response - Charge Control Model
ECE 606 Solid State Devices L22.2: PN Diode Large Signal Response - Turn-Off/Turn-On Characteristics
ECE 606 Solid State Devices L22.3: PN Diode Large Signal Response - Steady-State Expression
ECE 606 Solid State Devices L23.1: Schottky Diode - Basics
ECE 606 Solid State Devices L23.2: Schottky Diode - Physical Processes
ECE 606 Solid State Devices L23.3: Schottky Diode - Practical Issues
ECE 606 Solid State Devices L24.1: Bipolar Junction Transistor - Introduction
ECE 606 Solid State Devices L24.2: Bipolar Junction Transistor - Band Diagram in Equilibrium
ECE 606 Solid State Devices L24.3: Bipolar Junction Transistor - Currents in BJTs
ECE 606 Solid State Devices L24.4: Bipolar Junction Transistor - Ebers Moll Model
ECE 606 Solid State Devices L25.1: Bipolar Junction Transistor - Current Gain in BJTs
ECE 606 Solid State Devices L25.2: Bipolar Junction Transistor - Base Doping Design
ECE 606 Solid State Devices L25.3: Bipolar Junction Transistor - Collector Doping Design
ECE 606 Solid State Devices L25.4: Bipolar Junction Transistor - Emitter Doping Design
ECE 606 Solid State Devices L25.5: Bipolar Junction Transistor - Poly-Si Emitter Design
ECE 606 Solid State Devices L25.6: Bipolar Junction Transistor - Short Base Transport
ECE 606 Solid State Devices L26: Bipolar Junction Transistor - High Frequency Response
ECE 606 Solid State Devices L27.1: Heterojunction Bipolar Transistor - Applications, Concept, etc.
ECE 606 Solid State Devices L27.2: Heterojunction Bipolar Transistor - Equilibrium Solution
ECE 606 Solid State Devices L27.3: Heterojunction Bipolar Transistor - Types of Heterojunctions
ECE 606 Solid State Devices L27.4: Heterojunction Bipolar Transistor - Abrupt Junction HBTs
ECE 606 Solid State Devices L27.5: Heterojunction Bipolar Transistor - Graded Junction HBTs
ECE 606 Solid State Devices L27.6: Heterojunction Bipolar Transistor - Graded Base HBTs
ECE 606 Solid State Devices L27.7: Heterojunction Bipolar Transistor - Double Heterojunction HBTs
ECE 606 Solid State Devices L27.8: Heterojunction Bipolar Transistor - Modern Designs
ECE 606 Solid State Devices L28.1: MOS Electrostatics and MOScap - Background
ECE 606 Solid State Devices L28.2: MOScap - Band Diagram in Equilibrium and with Bias → MOS cap
ECE 606 Solid State Devices L28.3: MOScap - Qualitative Q-V Characteristics of MOS Capacitor
ECE 606 Solid State Devices L28.4: MOScap - MOScap Induced Charges in Depletion and Inversion
ECE 606 Solid State Devices L28.5: MOScap - MOScap Exact Solution of the Electrostatic Problem
ECE 606 Solid State Devices L29.1: MOS Capacitor Signal Response - Introduction/Background
ECE 606 Solid State Devices L29.2: MOS Capacitor Signal Response - Small Signal Response
ECE 606 Solid State Devices L29.3: MOS Capacitor Signal Response - Large Signal Response
ECE 606 Solid State Devices L30.1: MOSFET Introduction - Sub-Threshold (Depletion) Current
ECE 606 Solid State Devices L30.2: MOSFET Introduction - Above-Threshold, Inversion Current
ECE 606 Solid State Devices L30.3: MOSFET Introduction - Velocity Saturation in Simplified Theory
ECE 606 Solid State Devices L30.4: MOSFET Introduction - Bulk Charge Theory & Small Transistors
ECE 606 Solid State Devices L31.1: MOSFET Non-Idealities - Flat Band Voltage
ECE 606 Solid State Devices L31.2: MOSFET Non-Idealities - Threshold Voltage Shift & Trapped Charges
ECE 606 Solid State Devices L31.3: MOSFET Non-Idealities - Physics of Interface Traps
ECE 606 Solid State Devices L32.1: Modern MOSFET - Some of Moore's Law Challenges
ECE 606 Solid State Devices L32.2: Modern MOSFET - Short Channel Effect
ECE 606 Solid State Devices L32.3: Modern MOSFET - Control of Threshold Voltage
ECE 606 Solid State Devices L32.4: Modern MOSFET - Mobility Enhancement
ECE 606 Solid State Devices: Course Trailer