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This lecture explores the characterization techniques and methodologies for wide bandgap semiconductor devices, examining their unique properties, performance parameters, and testing procedures. Learn about the specialized measurement approaches used to evaluate electrical, thermal, and reliability characteristics of materials like silicon carbide (SiC) and gallium nitride (GaN), which are crucial for high-power, high-frequency, and high-temperature applications in modern electronics.
Syllabus
CHARACTERIZATION OF WIDE BANDGAP DEVICES
Taught by
NPTEL-NOC IITM