Electronic Devices & Circuits

Week 1: Introduction to Semiconductor Physics

Energy band formation in solids (Conductors, Insulators, Semiconductors); Intrinsic & Extrinsic semiconductors (Types of semiconductors); Concept of hole and effective mass; Charge carriers (electrons and holes).

Week 2: Carrier Transport and Diode Fundamentals

Carrier transport phenomena: Drift (conductivity, mobility) and Diffusion; Generation-Recombination (G-R); The Continuity Equation; Excess carriers and minority carrier injection.

Week 3: The PN Junction Diode (Static & Dynamic)

PN junction under equilibrium conditions (built-in potential, depletion region); Steady-state behaviour under forward and reverse bias (I-V characteristics); Small-signal model (incremental resistance, diffusion capacitance); Transient and AC behaviour (junction capacitance, switching); Breakdown mechanisms (Avalanche and Zener).

Week 4: Diode Circuits and Introduction to Active Devices

Diode Circuit Applications:Rectifiers (Half-wave, Full-wave), Clampers, Clippers.Incremental analysisof diode circuits.Metal-Semiconductor Junctions(Ohmic and Schottky contacts).Introduction to BJT and MOSFETas three-terminal devices.

Week 5: Bipolar Junction Transistor (BJT)

BJT physics and modes of operation (Active, Saturation, Cutoff); I-V characteristics (Input & Output curves); Large-signal and Ebers-Moll model; Introduction to BJT as an amplifier.

Week 6: MOS Capacitor and Field-Effect Transistor (MOSFET)

MOS Capacitor:Ideal and non-ideal structures, C-V characteristics.MOSFET:Structure and physical operation; Modes of operation (Cutoff, Triode, Saturation); Ideal I-V characteristics; Small-signal model (transconductance, output resistance); Non-ideal effects (Channel Length Modulation, Body Effect).

Week 7: DC Biasing of Transistors

The need for biasing and establishing the Q-point (DC Operating Point).BJT Biasing:Fixed bias, Voltage divider bias (emitter stabilized).MOSFET Biasing:Fixed bias, Voltage divider bias, Constant current biasing. Analysis of bias stability.

Week 8: Single-Stage Amplifiers (BJT)

Small-Signal Modelingof BJT.Common-Emitter (CE)amplifier: biasing, incremental analysis (voltage gain, input/output resistance).Common-Collector (CC/Emitter Follower)andCommon-Base (CB)amplifiers: configuration and properties.Comparisons and applicationsof the three configurations.

Week 9: Single-Stage Amplifiers (MOSFET)

Common-Source (CS)amplifier: biasing, incremental analysis.Common-Drain (CD/Source Follower)andCommon-Gate (CG)amplifiers: configuration and properties.Comparisons and applications.Cascoding and Cascadingsingle-stage amplifiers for improved performance.

Week 10: Amplifier Frequency Response and Limitations

Internal transistor capacitances (Cπ, Cμ, Cgs, Cgd); High-frequency small-signal models; Miller's Theorem; Frequency response of CS/CE amplifiers (finding fL and fH); Swing limits and large-signal operation.

Week 11: Differential Amplifiers and Current Mirrors

The Concept of Negative Feedback(properties, basic topologies).Differential Amplifiers:MOS and BJT implementations, large-signal and small-signal analysis, differential and common-mode gain, Common-Mode Rejection Ratio (CMRR).Current Mirrors:Basic topology and as active loads for differential pairs.

Week 12: Operational Amplifiers and Stability

Op-Amp as a block(ideal characteristics).Building a simple Op-Amp:Introduction to the two-stage op-amp (CS/CG input stage + CE/CS output stage).Frequency response of multi-stage amplifiers.Stability Analysis:Introduction to the concept of stability, loop gain, and the Barkhausen criterion; Introduction to frequency compensation.