Electron and Ion Beam Characterization

Overview

Electron and ion beams are widely used for both qualitative and quantitative analysis of semiconductor materials and devices. They can be used to image structures with sub-nm resolution and to provide information about elemental composition and dopant concentration. This course describes the fundamentals of electron and ion beam characterization and includes a project that analyzes the surface roughness of a solar cell.

Syllabus

Course Introduction

Electron and ion beams are widely used for both qualitative and quantitative analysis of semiconductor materials and devices. They can be used to image structures with sub-nm resolution and to provide information about elemental composition and dopant concentration. This course describes the fundamentals of electron and ion beam characterization and includes a project that analyzes the surface roughness of a solar cell.

Week 4.1: Scanning Electron Microscopy

This week introduces the concepts of scanning electron microscopy and how it is used for both qualitative and quantitative sample analysis.

Week 4.2: Auger Electron Spectroscopy

This week, you will learn about Auger electron emission spectroscopy, a powerful technique for surface analysis.

Week 4.3: Secondary Ion Mass Spectroscopy

This week, you will learn about secondary ion mass spectroscopy and how it is used to measure the concentration and distribution of constituent materials in semiconductors.