History and Future Developments of Blue - Green - White LEDs and Laser Diodes

Explore the history and future developments of blue, green, and white LEDs and laser diodes in this 33-minute talk by 2014 Nobel Prize winner Shuji Nakamura at the APS March Meeting 2015 Kavli Foundation Special Symposium. Delve into the fundamentals of LED technology, applications for InGaN-based LEDs, and their impact on energy savings. Trace the research journey from 1989, including the invention of Two Flow MOCVD and the development of GaN buffer layers. Understand the significance of thermal annealing and passivation of p-type GaN, as well as the crucial role of InGaN in LED efficiency. Examine the historical progression of LED efficiency and the contributions that led to high-brightness InGaN LEDs. Gain insights into GaN/InGaN on Sapphire research and UCSB's vision for the future of LED technology.

Syllabus

Outline
What is an LED?
Applications for InGaN-Based LEDs
Energy Savings Impact
Candidates for Blue LEDs: ZnSe vs. GaN
1989: Starting Point of Research
Invention: Two Flow MOCVD
First MOCVD GaN Buffer Layer
Thermal Annealing of p-type GaN
Passivation of p-type GaN
Homojunction vs. Double Heterostructure
InGaN:At the Heart of the LED
InGaN growth in 1991
High Quality InGaN Layers
First High Brightness InGaN LED
Possible Origins of High Efficiency
Historical: LED Efficiency
Contributions towards efficient blue LED
GaN/InGaN on Sapphire Research
UCSB's Vision
Acknowledgements